NTA7002NT1G
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Specification
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 30 V |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
高度 | 0.75 mm |
长度 | 1.6 mm |
宽度 | 0.8 mm |
封装 | SC-75-3 |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 7 Ohms |
Pd-功率耗散 | 300 mW |
Id-连续漏极电流 | 154 mA |
Vgs - 栅极-源极电压 | 4.5 V |
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NTA7002NT1G
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N 沟道,30V,154mA,1.4Ω@4.5V
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NTA7002NT1G
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N 沟道,30V,154mA,1.4Ω@4.5V
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NTA7002NT1G
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N 沟道,30V,154mA,1.4Ω@4.5V
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NTA7002NT1G
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N 沟道,30V,154mA,1.4Ω@4.5V
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NTA7002NT1G.
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N CHANNEL MOSFET 30V 154MA SC-75
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