NTB082N65S3F
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Specification
Qg-栅极电荷 | 81 nC |
Id-连续漏极电流 | 40 A |
Pd-功率耗散 | 313 W |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 650 V |
Vgs - 栅极-源极电压 | 30 V |
封装 | D2PAK-3 |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 82 mOhms |
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