NTB35N15T4G
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Mfr. Part #:
NTB35N15T4G
Allchips #:
R001-NTB35N15T4G-4-H-0000-X-N
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Specification
Vds-漏源极击穿电压 | 150 V |
Pd-功率耗散 | 178 W |
Rds On-漏源导通电阻 | 50 mOhms |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 20 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
封装 | TO-263-3 |
宽度 | 9.65 mm |
长度 | 10.29 mm |
高度 | 4.83 mm |
Id-连续漏极电流 | 37 A |
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