NTD18N06LT4G
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Specification
Vds-漏源极击穿电压 | 60 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
封装 | TO-252-2(DPAK) |
Qg-栅极电荷 | 11 nC |
高度 | 2.38 mm |
宽度 | 6.22 mm |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 5 V |
晶体管极性 | MOSFET |
Pd-功率耗散 | 55 W |
长度 | 6.73 mm |
Id-连续漏极电流 | 18 A |
Rds On-漏源导通电阻 | 65 mOhms |
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