NTD3055L170T4G
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Specification
Vds-漏源极击穿电压 | 60 V |
电路数量 | 1 Channel |
封装 | TO-252-3 |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Pd-功率耗散 | 28.5 W |
Id-连续漏极电流 | 9 A |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 5 V |
长度 | 6.73 mm |
宽度 | 6.22 mm |
Rds On-漏源导通电阻 | 170 mOhms |
Qg-栅极电荷 | 4.7 nC |
高度 | 2.38 mm |
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