NTD5867NLT4G
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Specification
Vds-漏源极击穿电压 | 60 V |
Rds On-漏源导通电阻 | 39 mOhms |
Vgs - 栅极-源极电压 | 10 V |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 15 nC |
电路数量 | 1 Channel |
Id-连续漏极电流 | 20 A |
工作温度范围 | - 55 C~+ 150 C |
封装 | TO-252-4 |
安装方式 | SMD/SMT |
Pd-功率耗散 | 36 W |
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NTD5867NLT4G
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Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
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NTD5867NLT4G
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Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
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N 沟道,60V,20A,39mΩ@20V
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