NTE4153NT1G
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Specification
Qg-栅极电荷 | 1.82 nC |
高度 | 0.7 mm |
封装 | SC-89-3 |
Id-连续漏极电流 | 915 mA |
Pd-功率耗散 | 300 mW |
Vds-漏源极击穿电压 | 20 V |
长度 | 1.6 mm |
宽度 | 0.85 mm |
Vgs - 栅极-源极电压 | 4.5 V |
Rds On-漏源导通电阻 | 230 mOhms |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
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