NTF3055-100T1G
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Specification
Pd-功率耗散 | 2.1 W |
Qg-栅极电荷 | 10.6 nC |
长度 | 6.5 mm |
Id-连续漏极电流 | 3 A |
Vds-漏源极击穿电压 | 60 V |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 175 C |
封装 | SOT-223-4 |
Rds On-漏源导通电阻 | 110 mOhms |
宽度 | 3.5 mm |
Vgs - 栅极-源极电压 | 10 V |
高度 | 1.57 mm |
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NTF3055-100T1G
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N 沟道,60V,3A,110mΩ@10V
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NTF3055-100T1G
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NTF3055-100T1G
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N 沟道,60V,3A,110mΩ@10V
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NTF3055-100T1G
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Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R
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