NTGD3148NT1G
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Specification
Pd-功率耗散 | 1.1 W |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 70 mOhms, 70 mOhms |
宽度 | 1.5 mm |
Vgs - 栅极-源极电压 | 4.5 V |
电路数量 | 2 Channel |
长度 | 3 mm |
工作温度范围 | - 50 C~+ 150 C |
封装 | TSOP-6-1.5mm |
Id-连续漏极电流 | 3.5 A |
Vds-漏源极击穿电压 | 20 V |
晶体管极性 | Power Trench MOSFET |
Qg-栅极电荷 | 3.8 nC, 3.8 nC |
高度 | 0.94 mm |
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