NTGS3136PT1G
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Specification
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 33 mOhms |
高度 | 0.94 mm |
工作温度范围 | - 55 C~+ 150 C |
长度 | 3 mm |
宽度 | 1.5 mm |
Vgs - 栅极-源极电压 | 8 V |
Pd-功率耗散 | 1.25 W |
Vds-漏源极击穿电压 | 20 V |
Id-连续漏极电流 | 5.1 A |
封装 | TSOP-6 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
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