NTHC5513T1G
Manufacturer:
Mfr. Part #:
NTHC5513T1G
Allchips #:
R001-NTHC5513T1G-4-H-2208-X-Y
Description:
MOSFET - 阵列 N 和 P 沟道 20V 2.9A,2.2A 1.1W 表面贴装型 ChipFET™
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Specification
Pd-功率耗散 | 1.1 W |
Id-连续漏极电流 | 3.9 A |
安装方式 | SMD/SMT |
封装 | ChipFET™ |
Vds-漏源极击穿电压 | 20 V |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 12 V |
长度 | 3.05 mm |
宽度 | 1.65 mm |
电路数量 | 2 Channel |
Rds On-漏源导通电阻 | 80 mOhms, 155 mOhms |
高度 | 1.05 mm |
工作温度范围 | - 55 C~+ 150 C |
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