NTHL040N65S3F
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Specification
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 30 V |
Pd-功率耗散 | 446 W |
Vds-漏源极击穿电压 | 650 V |
电路数量 | 1 Channel |
Rds On-漏源导通电阻 | 40 mOhms |
晶体管极性 | MOSFET |
封装 | TO-247-3 |
工作温度范围 | - 55 C~+ 150 C |
Id-连续漏极电流 | 65 A |
Qg-栅极电荷 | 158 nC |
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NTHL040N65S3F
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N沟道 650V 65A
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N沟道 650V 65A
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NTHL040N65S3HF
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通孔 N 通道 650V 65A(Tc) 446W(Tc) TO-247-3
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