NTLJD3119CTBG
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Specification
Vgs - 栅极-源极电压 | 8 V |
Vds-漏源极击穿电压 | 21 V, 20 V |
封装 | WDFN-6 |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Pd-功率耗散 | 710 mW |
高度 | 0.75 mm |
电路数量 | 2 Channel |
Id-连续漏极电流 | 3.8 A |
长度 | 2 mm |
宽度 | 2 mm |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 100 mOhms |
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MOSFET - 阵列 N 和 P 沟道 20V 2.6A,2.3A 710mW 表面贴装型 6-WDFN(2x2)
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MOSFET - 阵列 N 和 P 沟道 20V 2.6A,2.3A 710mW 表面贴装型 6-WDFN(2x2)
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