NTLJF4156NT1G
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Specification
Pd-功率耗散 | 1.5 W |
Vds-漏源极击穿电压 | 30 V |
Vgs - 栅极-源极电压 | 8 V |
高度 | 0.75 mm |
封装 | WDFN-6-EP(2x2) |
Id-连续漏极电流 | 3.7 A |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 70 mOhms |
长度 | 2 mm |
宽度 | 2 mm |
电路数量 | 1 Channel |
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