NTLUD3A50PZTAG
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Specification
封装 | UDFN-6 |
Qg-栅极电荷 | 10.4 nC |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 50 mOhms |
电路数量 | 2 Channel |
Id-连续漏极电流 | 5.6 A |
Vds-漏源极击穿电压 | 20 V |
Vgs - 栅极-源极电压 | 8 V |
Pd-功率耗散 | 1.4 W |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | MOSFET |
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P沟道,-20V,-5.6A,50mΩ@-4.5V
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