NTLUS3A18PZTBG
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Specification
封装 | UDFN-6 |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 90 mOhms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 1.7 W |
工作温度范围 | -55°C~150°C(TJ) |
Vds-漏源极击穿电压 | 20 V |
Id-连续漏极电流 | 5.1 A |
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