NTMD4N03R2G
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Specification
封装 | SO-8 |
Vgs - 栅极-源极电压 | 10 V |
Rds On-漏源导通电阻 | 60 mOhms, 60 mOhms |
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Pd-功率耗散 | 2 W |
电路数量 | 2 Channel |
长度 | 5 mm |
Qg-栅极电荷 | 8 nC, 8 nC |
高度 | 1.5 mm |
工作温度范围 | - 55 C~+ 150 C |
宽度 | 4 mm |
Id-连续漏极电流 | 4 A |
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