NTMFS4C022NT1G
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Specification
Pd-功率耗散 | 3.1W(Ta),64W(Tc) |
工作温度范围 | -55°C~150°C(TJ) |
Vds-漏源极击穿电压 | 30V |
Rds On-漏源导通电阻 | 1.7mΩ @ 30A,10V |
Vgs - 栅极-源极电压 | 2.2V @ 250uA |
封装 | SO-8-FL |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 30A |
晶体管极性 | MOSFET |
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