NTMFS4C10NBT1G
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Specification
Pd-功率耗散 | 2.51W(Ta),23.6W(Tc) |
晶体管极性 | MOSFET",,"子类别 |
Vds-漏源极击穿电压 | 30V |
封装 | SO-8-FL |
安装方式 | SMD/SMT |
工作温度范围 | -55°C~150°C(TJ) |
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