NTMFS4C10NT1G
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Specification
Pd-功率耗散 | 23.6 W |
Id-连续漏极电流 | 46 A |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 20 V |
Rds On-漏源导通电阻 | 5.8 mOhms |
工作温度范围 | - 55 C~+ 150 C |
封装 | SO-8-FL |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 18.6 nC |
电路数量 | 1 Channel |
Vds-漏源极击穿电压 | 30 V |
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NTMFS4C10NT1G
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MOSFET NFET SO8FL 30V 46A 6.96MO
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