NTMFS5C646NLT1G
In stock
- NTMFS5C646NLT1G Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Pd-功率耗散 | 66 W |
封装 | SO-8-FL |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
Qg-栅极电荷 | 15.7 nC |
Id-连续漏极电流 | 89 A |
Rds On-漏源导通电阻 | 4.7 mOhms |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 150 C |
Others include "NTMFS5C646NLT1G" parts
The following parts include 'NTMFS5C646NLT1G'
NTMFS5C646NLT1G Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
NTMFS5C646NLT1G
ON
Trans MOSFET N-CH 60V 20A 5-Pin SO-FL EP T/R
Learn More >
-
- View All Newest Products from Omron