NTMFS5H600NLT1G
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Specification
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 1.1 mOhms |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 89 nC |
封装 | SO-8-FL |
Id-连续漏极电流 | 250 A |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 160 W |
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表面贴装型 N 通道 60V 35A(Ta), 250A(Tc) 3.3W(Ta), 160W(Tc) 5-DFN(5x6)(8-SOFL)
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