NTMS10P02R2G
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Specification
Pd-功率耗散 | 2.5 W |
Rds On-漏源导通电阻 | 20 mOhms |
Vds-漏源极击穿电压 | 20 V |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
封装 | SOIC-8 |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 48 nC |
高度 | 1.5 mm |
Id-连续漏极电流 | 8.8 A |
Vgs - 栅极-源极电压 | 2.5 V |
长度 | 5 mm |
宽度 | 4 mm |
安装方式 | SMD/SMT |
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表面贴装型 P 通道 20V 8.8A(Ta) 1.6W(Ta) 8-SOIC
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