NTMS4816NR2G
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Specification
Vgs - 栅极-源极电压 | 20 V |
封装 | SO-8 |
Id-连续漏极电流 | 11 A |
Vds-漏源极击穿电压 | 30 V |
长度 | 5 mm |
宽度 | 4 mm |
Pd-功率耗散 | 2.04 W |
工作温度范围 | - 55 C~+ 150 C |
晶体管极性 | Power MOSFET |
Rds On-漏源导通电阻 | 12.7 mOhms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
高度 | 1.5 mm |
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