NTNS3164NZT5G
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Specification
晶体管极性 | MOSFET |
Id-连续漏极电流 | 361 mA |
封装 | XDFN3-3 |
Vgs - 栅极-源极电压 | 1V @ 250uA |
Pd-功率耗散 | 155mW(Ta) |
Rds On-漏源导通电阻 | 700 mOhms |
工作温度范围 | -55°C~150°C(TJ) |
Vds-漏源极击穿电压 | 20 V |
安装方式 | SMD/SMT |
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NTNS3164NZT5G
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Trans MOSFET N-CH 20V 0.361A 3-Pin XDFN T/R
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NTNS3164NZT5G
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NTNS3164NZT5G
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Trans MOSFET N-CH 20V 0.361A 3-Pin XDFN T/R
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