NTR2101PT1G
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Specification
高度 | 0.94 mm |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 12 nC |
Vgs - 栅极-源极电压 | 1.8 V |
Id-连续漏极电流 | 3.7 A |
宽度 | 1.3 mm |
Rds On-漏源导通电阻 | 120 mOhms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 8 V |
封装 | SOT-23-3 |
Pd-功率耗散 | 960 mW |
长度 | 2.9 mm |
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P 沟道,-8V,-3.7A,-39mΩ@-4.5V
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NTR2101PT1G
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Trans MOSFET P-CH 8V 3.7A 3-Pin SOT-23 T/R
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