NTR4101PT1G
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Specification
Pd-功率耗散 | 730 mW |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 8 V |
Rds On-漏源导通电阻 | 112 mOhms |
Id-连续漏极电流 | 3.2 A |
高度 | 0.94 mm |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 20 V |
封装 | SOT-23-3 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
长度 | 2.9 mm |
宽度 | 1.3 mm |
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表面贴装型 P 通道 20V 1.8A(Ta) 420mW(Ta) SOT-23-3
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P沟道,-20V,-3.2A,70mΩ@-4.5V
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表面贴装型 P 通道 20V 1.8A(Ta) 420mW(Ta) SOT-23-3
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Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R
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Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R
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Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R
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P沟道,-20V,-3.2A,70mΩ@-4.5V
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