NTR5105PT1G
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Specification
Id-连续漏极电流 | 196 mA |
Vds-漏源极击穿电压 | 60 V |
Pd-功率耗散 | 403 mW |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 6 Ohms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 1 nC |
工作温度范围 | - 55 C~+ 150 C |
封装 | SOT-23-3 |
Vgs - 栅极-源极电压 | 4.5 V |
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Trans MOSFET P-CH 60V 0.196A 3-Pin SOT-23 T/R
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