NTS4001NT1G
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Specification
Qg-栅极电荷 | 0.9 ns |
高度 | 0.85 mm |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 330 mW (1/3 W) |
Vgs - 栅极-源极电压 | 4 V |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 30 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 270 mA |
长度 | 2.1 mm |
宽度 | 1.24 mm |
封装 | SOT-323-3 |
Rds On-漏源导通电阻 | 1.5 Ohms |
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