NTTFS4928NTAG
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Specification
晶体管极性 | MOSFET |
Pd-功率耗散 | 2.12 W |
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
工作温度范围 | -55°C~150°C(TJ) |
Vgs - 栅极-源极电压 | 2.2 V |
封装 | WDFN-8 |
Rds On-漏源导通电阻 | 13.5 mOhms |
Qg-栅极电荷 | 8 nC |
Id-连续漏极电流 | 11.8 A |
电路数量 | 1 Channel |
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