NTTFS4C05NTAG
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Specification
晶体管极性 | MOSFET |
Id-连续漏极电流 | 75 A |
安装方式 | SMD/SMT |
封装 | WDFN-8 |
工作温度范围 | -55°C~150°C(TJ) |
Pd-功率耗散 | 820mW(Ta),33W(Tc) |
Rds On-漏源导通电阻 | 3.6 mOhms |
Vds-漏源极击穿电压 | 30 V |
Vgs - 栅极-源极电压 | 2.2V @ 250uA |
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