NTZD3154NT1G
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Specification
封装 | SOT-563-6 |
Qg-栅极电荷 | 1.5 nC, 1.5 nC |
高度 | 0.55 mm |
Vgs - 栅极-源极电压 | 4.5 V |
Rds On-漏源导通电阻 | 550 mOhms, 550 mOhms |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 570 mA |
电路数量 | 2 Channel |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 20 V |
长度 | 1.6 mm |
宽度 | 1.2 mm |
Pd-功率耗散 | 280 mW |
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