NVD3055-150T4G-VF01
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Specification
封装 | DPAK-3 |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
晶体管极性 | MOSFET |
Pd-功率耗散 | 28.8 W |
Id-连续漏极电流 | 9 A |
Rds On-漏源导通电阻 | 150 mOhms |
Qg-栅极电荷 | 15 nC |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
资格等级 | AEC-Q101 |
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表面贴装型 N 通道 60V 9A(Ta) 1.5W(Ta),28.8W(Tj) DPAK
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Trans MOSFET N-CH 60V 9A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
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