NVD5117PLT4G-VF01
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Specification
Rds On-漏源导通电阻 | 16 mOhms |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
封装 | DPAK-3 |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 61 A |
Pd-功率耗散 | 118 W |
电路数量 | 1 Channel |
Qg-栅极电荷 | 85 nC |
资格等级 | AEC-Q101 |
工作温度范围 | - 55 C~+ 175 C |
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NVD5117PLT4G-VF01
ON
表面贴装型 P 通道 60V 11A(Ta),61A(Tc) 4.1W(Ta),118W(Tc) DPAK
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NVD5117PLT4G-VF01
ON
表面贴装型 P 通道 60V 11A(Ta),61A(Tc) 4.1W(Ta),118W(Tc) DPAK
Learn More >
-
-
-
NVD5117PLT4G-VF01
ON
表面贴装型 P 通道 60V 11A(Ta),61A(Tc) 4.1W(Ta),118W(Tc) DPAK
Learn More >
-
-
-
NVD5117PLT4G-VF01
ON
表面贴装型 P 通道 60V 11A(Ta),61A(Tc) 4.1W(Ta),118W(Tc) DPAK
Learn More >
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