NVD5C632NLT4G
Manufacturer:
Mfr. Part #:
NVD5C632NLT4G
Allchips #:
R001-NVD5C632NLT4G-4-H-0000-X-Y
Description:
N沟道 60V 3.4mΩ@4.5V
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Specification
Pd-功率耗散 | 4W(Ta),115W(Tc) |
工作温度范围 | -55°C~175°C(TJ) |
晶体管极性 | MOSFET",,"子类别 |
Vgs - 栅极-源极电压 | 2.1V @ 250uA |
资格等级 | AEC-Q101 |
Vds-漏源极击穿电压 | 60V |
封装 | TO-252-3 |
Rds On-漏源导通电阻 | 2.5mΩ @ 50A,10V |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 29A |
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N沟道 60V 3.4mΩ@4.5V
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