NVD6824NLT4G-VF01
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Specification
Pd-功率耗散 | 3.9W(Ta),90W(Tc) |
封装 | TO-252-3 |
安装方式 | SMD/SMT |
工作温度范围 | -55°C~175°C(TJ) |
资格等级 | AEC-Q101 |
Vds-漏源极击穿电压 | 100V |
晶体管极性 | MOSFET |
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