NVMFD5C470NLWFT1G
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Specification
电路数量 | 2 Channel |
Vds-漏源极击穿电压 | 40 V |
Vgs - 栅极-源极电压 | 20 V |
封装 | DFN-8 |
Qg-栅极电荷 | 9 nC, 9 nC |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 36 A |
资格等级 | AEC-Q101 |
Pd-功率耗散 | 24 W |
Rds On-漏源导通电阻 | 9.2 mOhms, 9.2 mOhms |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 175 C |
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