NVMFD5C478NWFT1G
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Specification
电路数量 | 2 Channel |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 6.3 nC |
封装 | DFN-8 |
工作温度范围 | - 55 C~+ 175 C |
Id-连续漏极电流 | 27 A |
Pd-功率耗散 | 23 W |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 17 mOhms |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 40 V |
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Mosfet Array 2 N-Channel (Dual) 40V 9.8A (Ta), 27A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6
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