NVMFS4C302NT1G
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Specification
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
Pd-功率耗散 | 115 W |
Qg-栅极电荷 | 82 nC |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 175 C |
Id-连续漏极电流 | 241 A |
封装 | SO-8FL-8 |
Rds On-漏源导通电阻 | 1.15 mOhms |
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NVMFS4C302NT1G
ON
NFET SO8FL 30V 1.15MO
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