NVMFS5A160PLZWFT1G
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Specification
资格等级 | AEC-Q101 |
晶体管极性 | MOSFET |
Pd-功率耗散 | 200 W |
Rds On-漏源导通电阻 | 7.7 mOhms |
Qg-栅极电荷 | 160 nC |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 60 V |
封装 | SO-8FL |
工作温度范围 | - 55 C~+ 175 C |
安装方式 | SMD/SMT |
电路数量 | 1 Channel |
Id-连续漏极电流 | 100 A |
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表面贴装型 P 通道 60V 15A(Ta),100A(Tc) 3.8W(Ta),200W(Tc) 5-DFN(5x6)(8-SOFL)
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