NVMFS5C612NLWFAFT1G
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Specification
晶体管极性 | MOSFET |
资格等级 | AEC-Q101 |
Qg-栅极电荷 | 91 nC |
封装 | SO-8-FL |
Pd-功率耗散 | 167 W, 3.8 W |
工作温度范围 | - 55 C~+ 175 C |
Vgs - 栅极-源极电压 | 10 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Vds-漏源极击穿电压 | 60 V |
Rds On-漏源导通电阻 | 1.13 mOhms |
Id-连续漏极电流 | 250 A |
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