NVMFS6H801NT1G
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Specification
工作温度范围 | - 55 C~+ 175 C |
封装 | SO-8FL |
Vds-漏源极击穿电压 | 80 V |
资格等级 | AEC-Q101 |
Rds On-漏源导通电阻 | 2.8 mOhms |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 64 nC |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 166 W |
Id-连续漏极电流 | 157 A |
Vgs - 栅极-源极电压 | 20 V |
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