NVTFS4C06NTAG
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Specification
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 4.2 mOhms |
资格等级 | AEC-Q101 |
Pd-功率耗散 | 3.1W(Ta),37W(Tc) |
Vds-漏源极击穿电压 | 30 V |
封装 | WDFN-8 |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 71 A |
工作温度范围 | -55°C~175°C(TJ) |
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