NVTFS5116PLTAG
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Specification
Pd-功率耗散 | 21 W |
Id-连续漏极电流 | 14 A |
Vds-漏源极击穿电压 | 60 V |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 52 mOhms |
封装 | WDFN-8 |
电路数量 | 1 Channel |
工作温度范围 | + 175 C |
Vgs - 栅极-源极电压 | 3V @ 250uA |
资格等级 | AEC-Q101 |
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