NVTFS5116PLTWG
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Specification
Rds On-漏源导通电阻 | 52 mOhms |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Pd-功率耗散 | 21 W |
工作温度范围 | + 175 C |
Id-连续漏极电流 | 14 A |
Vds-漏源极击穿电压 | 60 V |
封装 | WDFN-8 |
资格等级 | AEC-Q101 |
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NVTFS5116PLTWG
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表面贴装型 P 通道 60V 6A(Ta) 3.2W(Ta),21W(Tc) 8-WDFN(3.3x3.3)
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NVTFS5116PLTWG
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Trans MOSFET P-CH 60V 6A Automotive AEC-Q101 8-Pin WDFN EP T/R
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