NVTFS6H888NTAG
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Specification
Vds-漏源极击穿电压 | 80 V |
Vgs - 栅极-源极电压 | 20 V |
Rds On-漏源导通电阻 | 55 mOhms |
资格等级 | AEC-Q101 |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 175 C |
Id-连续漏极电流 | 13 A |
封装 | WDFN-8 |
电路数量 | 1 Channel |
Pd-功率耗散 | 18 W |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 4.7 nC |
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NVTFS6H888NTAG
Analog Devices Inc
TR,NMOS,NVTFS6H888NLWF**
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NVTFS6H888NTAG
ON
N-Channel 80V 4.7A (Ta), 12A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
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