NVTR01P02LT1G
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Specification
资格等级 | AEC-Q101 |
Id-连续漏极电流 | 1.3 A |
Rds On-漏源导通电阻 | 220 mOhms |
安装方式 | SMD/SMT |
Pd-功率耗散 | 400mW(Ta) |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 20 V |
封装 | SOT-23-3 |
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