NVTR4502PT1G
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Specification
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 20 V |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 10 nC |
Rds On-漏源导通电阻 | 155 mOhms |
电路数量 | 1 Channel |
封装 | SOT-23-3 |
Id-连续漏极电流 | 1.95 A |
资格等级 | AEC-Q101 |
Pd-功率耗散 | 1.25 W |
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
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P 沟道,-30V,-1.95A,-240mΩ@-4.5V
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NVTR4502PT1G
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P 沟道,-30V,-1.95A,-240mΩ@-4.5V
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