RFD3055LESM9A
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Specification
Rds On-漏源导通电阻 | 107 mOhms |
工作温度范围 | - 55 C~+ 175 C |
Vds-漏源极击穿电压 | 60 V |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Pd-功率耗散 | 38 W |
长度 | 6.73 mm |
宽度 | 6.22 mm |
Id-连续漏极电流 | 11 A |
晶体管极性 | MOSFET |
封装 | DPAK-3 |
Vgs - 栅极-源极电压 | 16 V |
高度 | 2.39 mm |
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RFD3055LESM9A
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Trans MOSFET N-CH Si 60V 11A 3-Pin(2+Tab) DPAK T/R
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RFD3055LESM9A
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Trans MOSFET N-CH Si 60V 11A 3-Pin(2+Tab) DPAK T/R
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RFD3055LESM9A
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表面贴装型 N 通道 60V 11A(Tc) 38W(Tc) TO-252AA
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