SBC857BWT1G
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Specification
封装 | TO-323-3 |
Pd-功率耗散 | 150mW |
工作温度范围 | - 55 C~+ 150 C |
集射极击穿电压(Vceo) | 45V |
集电极电流(Ic) | 100mA |
安装方式 | SMD/SMT |
资格等级 | AEC-Q101 |
类型 | PNP |
直流电流增益(hFE@Ic,Vce) | - |
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